VISHAY · FETs & Power MOSFETs · MPN SIS890ADN-T1-GE3
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 24.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.2pF |
| RDS(on) | 29mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
| Type | N-Channel |
N-Channel 100V 24.7A 25W Surface Mount PowerPAK1212-8