VISHAY · FETs & Power MOSFETs · MPN SIS888DN-T1-GE3
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| Gate Charge(Qg) | 11.5nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 20.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 85mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 420pF |
| Type | N-Channel |
N-Channel 150V 20.2A 52W Surface Mount PowerPAK1212-8S