VISHAY · FETs & Power MOSFETs · MPN SIS862DN-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Output Capacitance(Coss) | 545pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 12.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.32nF |
| Type | N-Channel |
N-Channel 60V 40A 52W Surface Mount PowerPAK1212-8