VISHAY · FETs & Power MOSFETs · MPN SIS822DNT-T1-GE3
No reviews yet — be the first to review VISHAY SIS822DNT-T1-GE3.
| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 435pF |
30V 12A 2.5V 3.2W 24mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS