VISHAY · FETs & Power MOSFETs · MPN SIS782DN-T1-GE3
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| Gate Charge(Qg) | 30.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.025nF |
30V 16A 2.3V 26W 9.5mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS