VISHAY · FETs & Power MOSFETs · MPN SIS606BDN-T1-GE3
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 9.4A;35.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.7W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 17.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
100V 4V 17.4mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS