VISHAY · FETs & Power MOSFETs · MPN SIS488DN-T1-GE3
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| Gate Charge(Qg) | 9.8nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 19.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
N-Channel 40V 19.3A 2.4W Surface Mount PowerPAK1212-8