VISHAY SIS472DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS472DN-T1-GE3

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Specifications

Gate Charge(Qg)9.8nC
Drain to Source Voltage30V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W;28W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)8.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)997pF
Vgs±20V

Technical details

N-Channel 30V 3.5W 28W Surface Mount PowerPAK1212-8

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