VISHAY SIS472BDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS472BDN-T1-GE3

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Specifications

Gate Charge(Qg)6.9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)287pF
Current - Continuous Drain(Id)15.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

N-Channel 30V 15.3A 3.2W Surface Mount PowerPAK1212-8

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