VISHAY SIS472ADN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS472ADN-T1-GE3

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Specifications

Gate Charge(Qg)12.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)142pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.515nF

Technical details

N-Channel 30V 24A 18W Surface Mount PowerPAK1212-8

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