VISHAY · FETs & Power MOSFETs · MPN SIS468DN-T1-GE3
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
80V 30A 3V 52W 32mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS