VISHAY · FETs & Power MOSFETs · MPN SIS4608LDN-T1-GE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 12.6A;36.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.3W;27.1W |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 905pF |
60V 1V 11.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS