VISHAY SIS4604DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS4604DN-T1-GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.2nC@10V
Current - Continuous Drain(Id)14.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)14.5pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)960pF

Technical details

N-Channel 60V 14.6A 3.6W Surface Mount PowerPAK1212-8

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