VISHAY · FETs & Power MOSFETs · MPN SIS447DN-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 57.5nC@10V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 7.1mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.59nF |
P-Channel 20V 18A 3.7W Surface Mount PowerPAK1212-8