VISHAY · FETs & Power MOSFETs · MPN SIS444DN-T1-GE3
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.065nF |
30V 35A 1.2V 3.7W 3.3mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS