VISHAY SIS443DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS443DN-T1-GE3

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Specifications

Gate Charge(Qg)41.5nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)285pF
RDS(on)16mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.37nF
TypeP-Channel

Technical details

P-Channel 40V 35A 3.7W Surface Mount PowerPAK1212-8

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