VISHAY SIS438DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS438DN-T1-GE3

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Specifications

Gate Charge(Qg)7.3nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)880pF
TypeN-Channel

Technical details

N-Channel 20V 16A 3.5W Surface Mount PowerPAK1212-8

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