VISHAY · FETs & Power MOSFETs · MPN SIS435DNT-T1-GE3
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| Gate Charge(Qg) | 180nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.7W;39W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5.4mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.7nF |
20V 30A 400mV 5.4mΩ@4.5V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS