VISHAY · FETs & Power MOSFETs · MPN SIS434DN-T1-GE3
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| Gate Charge(Qg) | 12.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 7.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.53nF |
N-Channel 40V 35A Surface Mount PowerPAK1212-8