VISHAY · FETs & Power MOSFETs · MPN SIS429DNT-T1-GE3
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| Gate Charge(Qg) | 15nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | P-Channel |
30V 20A 1V 3.5W 34mΩ@4.5V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS