VISHAY · FETs & Power MOSFETs · MPN SIS413DN-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 427pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 382pF |
| RDS(on) | 13.2mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.28nF |
P-Channel 30V 18A 52W Surface Mount PowerPAK1212-8