VISHAY · FETs & Power MOSFETs · MPN SIS412DN-T1-GE3
No reviews yet — be the first to review VISHAY SIS412DN-T1-GE3.
| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 95pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 15.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 435pF |
| Type | N-Channel |
N-Channel 30V 12A 15.6W Surface Mount PowerPAK1212-8