VISHAY · FETs & Power MOSFETs · MPN SIS410DN-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
20V 35A 2.5V 52W 6.3mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS