VISHAY · FETs & Power MOSFETs · MPN SIS407ADN-T1-GE3
No reviews yet — be the first to review VISHAY SIS407ADN-T1-GE3.
| Gate Charge(Qg) | 63nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 16.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.875nF |
20V 16.7A 400mV 3.7W 9mΩ@4.5V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS