VISHAY · FETs & Power MOSFETs · MPN SIS406DN-T1-GE3
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| Gate Charge(Qg) | 8.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
N-Channel 30V 14A 2.3W Surface Mount PowerPAK1212-8