VISHAY · FETs & Power MOSFETs · MPN SIS184LDN-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Current - Continuous Drain(Id) | 18.7A;69.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.7W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 5.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
60V 3V 5.4mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS