VISHAY SIS184DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS184DN-T1-GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)395pF
Current - Continuous Drain(Id)65.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)7mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.49nF
TypeN-Channel

Technical details

N-Channel 60V 65.3A 52W Surface Mount PowerPAK1212-8

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