VISHAY SIS178LDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS178LDN-T1-GE3

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)28.5nC@10V
Current - Continuous Drain(Id)45.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)13.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.135nF
TypeN-Channel

Technical details

N-Channel 70V 45.3A 39W Surface Mount PowerPAK1212-8

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