VISHAY SIS176LDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS176LDN-T1-GE3

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)19nC@4.5V
Current - Continuous Drain(Id)42.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)12.5mΩ@3.3V
Number1 N-channel
Input Capacitance(Ciss)1.66nF
TypeN-Channel

Technical details

N-Channel 70V 42.3A 39W Surface Mount PowerPAK1212-8

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