VISHAY SIS128LDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS128LDN-T1-GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)14.5nC@4.5V
Output Capacitance(Coss)127pF
Current - Continuous Drain(Id)33.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)7.8pF
RDS(on)15.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

N-Channel 80V 33.7A 39W Surface Mount PowerPAK1212-8

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