VISHAY SIS126DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS126DN-T1-GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)45.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)21.1pF
RDS(on)12.5mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.402nF
TypeN-Channel

Technical details

N-Channel 80V 45.1A 52W Surface Mount PowerPAK1212-8

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