VISHAY · FETs & Power MOSFETs · MPN SIS112LDN-T1-GE3
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| Gate Charge(Qg) | 11.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.8A |
| Output Capacitance(Coss) | 30pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 19.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 135mΩ@4.5V |
| Input Capacitance(Ciss) | 355pF |
| Type | N-Channel |
100V 8.8A 2.5V 19.8W 135mΩ@4.5V N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS