VISHAY · FETs & Power MOSFETs · MPN SIS110DN-T1-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 6.5nC@10V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 15W |
| RDS(on) | 54mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
100V 5.2A 4V 15W 54mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS