VISHAY SIS108DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIS108DN-T1-GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)7.1nC@10V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)34mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)545pF
TypeN-Channel

Technical details

N-Channel 80V 6.7A 24W Surface Mount PowerPAK1212-8

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