VISHAY · FETs & Power MOSFETs · MPN SIS106DN-T1-GE3
No reviews yet — be the first to review VISHAY SIS106DN-T1-GE3.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13.5nC@10V |
| Current - Continuous Drain(Id) | 9.8A;16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.2W;24W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 18.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 540pF |
60V 4V 18.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS