VISHAY SIRS700DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRS700DP-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)130nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation7.4W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)4.3mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)5.95nF
TypeN-Channel

Technical details

N-Channel 100V 30A 7.4W Surface Mount PowerPAK-SO-8

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