VISHAY SIRS5800DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRS5800DP-T1-GE3

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Specifications

Gate Charge(Qg)122nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)265A
Output Capacitance(Coss)1.635nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.19nF
TypeN-Channel

Technical details

N-Channel 80V 265A 240W Surface Mount PowerPAKSO-8

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