VISHAY · FETs & Power MOSFETs · MPN SIRS4600DP-T1-RE3
No reviews yet — be the first to review VISHAY SIRS4600DP-T1-RE3.
| Output Capacitance(Coss) | 1.775nF |
|---|---|
| Pd - Power Dissipation | 278W |
| Configuration | - |
| Gate Charge(Qg) | 162nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 359A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| RDS(on) | 1.3mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.655nF |
278W 60V 359A 4V 1.3mΩ@7.5V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS