VISHAY SIRS4401DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRS4401DP-T1-GE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)588nC@10V
Output Capacitance(Coss)1.5nF
Current - Continuous Drain(Id)198A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation132W
Reverse Transfer Capacitance (Crss@Vds)1.32nF
RDS(on)2.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)21.85nF
TypeP-Channel

Technical details

P-Channel 40V 198A 132W Surface Mount PowerPAKSO-8

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