VISHAY SIRS4400DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIRS4400DP-T1-RE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)135nC@10V
Current - Continuous Drain(Id)440A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation240W
RDS(on)0.96mΩ@4.5V
TypeN-Channel

Technical details

40V 440A 2.3V 240W 0.96mΩ@4.5V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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