VISHAY · FETs & Power MOSFETs · MPN SIRS4302DP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 478A |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 0.83mΩ@4.5V |
| Type | N-Channel |
30V 478A 2.2V 208W 0.83mΩ@4.5V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS