VISHAY SIRS4301DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRS4301DP-T1-GE3

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Specifications

Gate Charge(Qg)548nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)2.07nF
Current - Continuous Drain(Id)227A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation84W
Reverse Transfer Capacitance (Crss@Vds)1.175nF
RDS(on)1.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)19.75nF
TypeP-Channel

Technical details

P-Channel 30V 227A 84W Surface Mount PowerPAKSO-8

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