VISHAY · FETs & Power MOSFETs · MPN SIRC18DP-T1-GE3
No reviews yet — be the first to review VISHAY SIRC18DP-T1-GE3.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 111nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.06nF |
30V 60A 2.4V 1.1mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS