VISHAY · FETs & Power MOSFETs · MPN SIRB40DP-T1-GE3
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| Current - Continuous Drain(Id) | 40A |
|---|---|
| RDS(on) | 4.2mΩ@4.5V |
| Pd - Power Dissipation | 46.2W |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.29nF |
| Gate Charge(Qg) | 93nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 680pF |
40A 4.2mΩ@4.5V 46.2W 2.4V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS