VISHAY SIRA99DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA99DP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)84nC@10V
Output Capacitance(Coss)5nF
Current - Continuous Drain(Id)195A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)1.7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.995nF
TypeP-Channel

Technical details

P-Channel 30V 195A 104W Surface Mount PowerPAK-SO-8

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