VISHAY SIRA90DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIRA90DP-T1-RE3

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)65.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation6.25W
RDS(on)0.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)306pF
Number1 N-channel
Input Capacitance(Ciss)10.18nF
TypeN-Channel

Technical details

N-Channel 30V 65.8A 6.25W Surface Mount PowerPAKSO-8

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