VISHAY · FETs & Power MOSFETs · MPN SIRA90DP-T1-GE3
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 65.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 0.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 306pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.18nF |
N-Channel 30V 65.8A 6.25W Surface Mount PowerPAKSO-8