VISHAY SIRA88DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA88DP-T1-GE3

No reviews yet — be the first to review VISHAY SIRA88DP-T1-GE3.

Specifications

Gate Charge(Qg)8.3nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)45.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation16W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)6.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)985pF

Technical details

N-Channel 30V 45.5A 16W Surface Mount PowerPAK-SO-8

Related FETs & Power MOSFETs