VISHAY SIRA84BDP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA84BDP-T1-GE3

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Specifications

Gate Charge(Qg)10.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.7W
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)1.05nF

Technical details

N-Channel 30V 70A 3.7W Surface Mount PowerPAKSO-8

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