VISHAY SIRA80DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIRA80DP-T1-RE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)188nC@10V
Output Capacitance(Coss)4.28nF
Current - Continuous Drain(Id)335A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)626pF
RDS(on)0.93mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)9.53nF
TypeN-Channel

Technical details

N-Channel 30V 335A 104W Surface Mount PowerPAKSO-8

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